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| LSF850C1 Infrared Emitting Diode 2.ELECTRICAL & OPTICAL CHARACTERISTICS (Ta=25) CONDITIONS ITEM SYMBOL IF=20mA Power Output PO IF=20mA Forward Voltage VF VR=5V Reverse Current IR Peak Wavelength p IF=20mA Spectral Line Half Width IF=20mA IF=20mA Half Intensity Beam Angle MIN TYP 8.0 1.4 850 30 25 MAX 1.9 100 UNIT mW V A nm nm deg. FORWARD I-V CHARACTERISTICS 60 RELATIVE POWER OUTPUT(%) 50 40 30 20 10 0 0 1 2 3 FORWARD VOLTAGE(V) 250 RELATIVE POWER vs FORWARD CURRENT FORWARD CURRENT(mA) 200 150 High-output Power Compact High Reliability APPLICATIONS Optical Switches Optical Sensors FEATURES Anode Cathode Dimensions (Unit:mm) 100 50 0 0 10 20 30 40 50 60 FORWARD CURRENT(mA) SPECTRAL OUTPUT 120 120 100 RADIATION PATTERN 80 70 FORWARD CURRENT(mA) 60 50 40 30 20 10 0 -30 THERMAL DERATING CURVE 1. ABSOLUTE MAXIMUM RATINGS (Ta=25) ITEM RATINGS SYMBOL Forward Current (DC) 60 IF Forward Current (Pulse)*1 0.5 IFP 5 Reverse Voltage VR 100 Power Dissipation PD Operating Temp. Topr -20 TO 85 Storage Temp. Tstg -30 TO 100 Junction Temp. 100 Tj Lead Soldering Temp.*2 260 Tls *1:Tw=10uS,T=10mS *2:Time 5 Sec max,Position:Up to 3mm from the body UNIT mA A V mW 100 RELATIVE POWER OUTPUT(%) RELATIVE POWER OUTPUT(%) 80 60 40 20 0 -90 80 60 40 20 -60 -30 0 30 60 90 0 30 60 90 BEAM ANGLE(deg.) 0 750 850 WAVELENGTH(nm) 950 AMBIENT TEMPERATURE() To purchase this part contact Marktech Optoelectronics at OPTRANS 800.984.5337 Marktech Optoelectronics www.marktechopto.com 2008/6/9 |
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